Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-11-14
1997-08-05
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257188, 257192, 257200, 257201, 257614, H01L 2906, H01L 310328, H01L 31072, H01L 310336
Patent
active
056545584
ABSTRACT:
This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices.
REFERENCES:
patent: 4207122 (1980-06-01), Goodman
patent: 4783427 (1988-11-01), Reed et al.
patent: 4870749 (1989-10-01), Schulman
patent: 5021841 (1991-06-01), Leburton et al.
patent: 5093699 (1992-03-01), Weichold et al.
patent: 5113231 (1992-05-01), Soderstrom et al.
patent: 5179037 (1993-01-01), Seabaugh
patent: 5194983 (1993-03-01), Voisin
patent: 5221849 (1993-06-01), Goronkin et al.
patent: 5234848 (1993-08-01), Seabaugh
patent: 5241190 (1993-08-01), Eisentein
patent: 5326985 (1994-07-01), Goronkin et al.
Soderstrom et al., "Demonstration of large peak-to-valley current ratios in lAs/AlGaSb/InAs single-barrier heterostructures," Appl Phys. Lett., vol. 55, No. 13, 25 Sep. 1989, pp. 1348-1350.
Hoffman et al., "Setback Modulation Doping Of Hg Te-Cd Te Multiple Quantum Wells,"Appl. Phys. Ltrs. 60(18), pp. 2282-2284, May 1992.
Hoffman et al. "Electron Mobilities and Quantum Hall Effect In Modulation-Doped Hg Te-Cd Te Superlattices,"Phys. Rev. B., vol. 44, No. 15, pp. 8376-8379, Oct. 1991.
Longenbach et al., "Resonant Interband Tunneling In InAs/Ga Sb/AlS6/InAs and GaSb/InaS/AlSb/GdSb, Heterostructures,"Appl. Phys. Ltrs. 57(15), pp. 1554-1556, Oct. 90.
Randall et al., "Nanoelectronics: Fauciful Physics or Real Devices?,"J. Vac. Sc. Technol. B-7(6), pp. 1398-1404, Nov./Dec. 89.
Imail et al., "Laterial Resonant Tunneling in a Double-Barrier Field Effect Transistor,"Appl. Phys. Lett. 55(6), pp. 589-591, Aug. 89.
Chou et al., "Observation of Electron Resonant Tunneling in a Lateral Dual-Gate Resonant Tunneling Field-Effect Transistor,"Appl. Phys. Lett. 55(2), pp. 176-178, Jul. 89.
S. Sen et al., "Resonant Tunneling Device with Multiple Negative Differential Resistance: Digital and Signal Processing Applications with Reduced Circuit Complexity", IEEE Ttran. on Elec. Dev., vol. ED-34, No. 10, pp. 2185-2191, Oct. 87.
Bartoli, Jr. Filbert J.
Hoffman Craig A.
Meyer Jerry R.
McDonnell Thomas E.
Saadat Mahshid
Stockstill Charles
The United States of America as represented by the Secretary of
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