Inter-metal-wiring antifuse device provided by self-alignment

Details Inter-metal-wiring antifuse device provided by self-alignment Inter-metal-wiring antifuse device provided by self-alignment

1995-09-01

1999-07-27

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257529, 257530, H01L 2900

Patent

active

059295058

ABSTRACT:
A first electrode layer is formed on a semiconductor substrate, and surfaces other than a top surface thereof are buried in an insulation film, and the top surface makes the same surface as that of the insulation film. An antifuse insulation film is formed on a flat surface including the top surface of the first electrode layer. A second electrode layer is formed on the antifuse insulation film. An antifuse portion is formed by self-alignment at a cross point between the first and second electrode layers.

REFERENCES:
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5557136 (1996-09-01), Gordon et al.
patent: 5625220 (1997-04-01), Liu et al.

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