Inter-metal dielectric structure which combines fluorine-doped g

Details Inter-metal dielectric structure which combines fluorine-doped g Inter-metal dielectric structure which combines fluorine-doped g

1996-01-16

1997-08-26

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257646, 257760, H01L 2358

Patent

active

056613342

ABSTRACT:
An improved inter-metal dielectric structure having a low dielectric constant for reduced capacitive coupling between adjacent metal conductor strips is disclosed. The structure employs silicate glass that is heavily doped with fluorine atoms as the primary dielectric material. The primary dielectric material is encased in an insulative barrier film which has a high degree of impermeability to both fluorine atoms and water molecules. Although the preferred barrier material, silicon nitride, possesses a dielectric constant that is higher than undoped silicate glass, the thickness of the silicon nitride film is relatively insignificant compared to the thickness of the fluorine-doped silicate glass portion of the structure. As the dielectric layers are in a serial relationship with one another and the thickness of the silicon nitride layer is relatively insignificant compared with that of the fluorine-doped glass layer, the dielectric constant of the fluorine-doped glass layer dominates in the composite dielectric constant. The reduced capacitive coupling provides improved circuit performance. Degradation of circuit reliability is prevented by encapsulating the fluorine-doped glass portions of the structure.

REFERENCES:
patent: 5407529 (1995-04-01), Homma
patent: 5521424 (1996-05-01), Ueno et al.

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