Inter-conductive layer fuse for integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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257209, A01L 2900

Patent

active

060780916

ABSTRACT:
A method and structure for customizing or repairing integrated circuits using passivated tungsten fuses and low-power energy beams to select which tungsten fuses are to be removed. The tungsten fuses are formed in an array to connect possible connection points of the device. A low-power energy source then selects undesired connection points, and a conventional etch removes the selected tungsten fuses, thereby customizing or repairing the integrated circuit. Because neither precision custom masks nor high energy laser sources are required, the problems associated with conventional methods are reduced or eliminated.

REFERENCES:
patent: 4383165 (1983-05-01), Smith et al.
patent: 4536949 (1985-08-01), Takayama et al.
patent: 5329152 (1994-07-01), Janai et al.
patent: 5918147 (1999-06-01), Filipiak et al.
Full English Translation of Japan 62-119938, published Jun. 1987.

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