Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-11-04
2000-06-20
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257209, A01L 2900
Patent
active
060780916
ABSTRACT:
A method and structure for customizing or repairing integrated circuits using passivated tungsten fuses and low-power energy beams to select which tungsten fuses are to be removed. The tungsten fuses are formed in an array to connect possible connection points of the device. A low-power energy source then selects undesired connection points, and a conventional etch removes the selected tungsten fuses, thereby customizing or repairing the integrated circuit. Because neither precision custom masks nor high energy laser sources are required, the problems associated with conventional methods are reduced or eliminated.
REFERENCES:
patent: 4383165 (1983-05-01), Smith et al.
patent: 4536949 (1985-08-01), Takayama et al.
patent: 5329152 (1994-07-01), Janai et al.
patent: 5918147 (1999-06-01), Filipiak et al.
Full English Translation of Japan 62-119938, published Jun. 1987.
Huggins Alan H.
MacPherson John
Carroll J.
Clear Logic, Inc.
LandOfFree
Inter-conductive layer fuse for integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Inter-conductive layer fuse for integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inter-conductive layer fuse for integrated circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855527