Inter-conductive layer fuse for integrated circuits

Semiconductor device manufacturing: process – Repair or restoration

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Details

438132, 438601, H01L 2100, H01L 2182, H01L 2144

Patent

active

060965665

ABSTRACT:
A method and structure for customizing or repairing integrated circuits using passivated tungsten fuses and low-power energy beams to select which tungsten fuses are to be removed. The tungsten fuses are formed in an array to connect possible connection points of the device. A low-power energy source then selects undesired connection points, and a conventional etch removes the selected tungsten fuses, thereby customizing or repairing the integrated circuit. Because neither precision custom masks nor high energy laser sources are required, the problems associated with conventional methods are reduced or eliminated.

REFERENCES:
patent: 5185291 (1993-02-01), Fischer et al.
patent: 5834321 (1998-11-01), Salisbury
patent: 5885749 (1999-03-01), Huggins et al.

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