Intensity of a light beam applied to a layered semiconductor str

Details Intensity of a light beam applied to a layered semiconductor str Intensity of a light beam applied to a layered semiconductor str

1983-01-03

1985-10-29

Punter, William H.

350363, 350386, 350393, G02F 129, G02F 135

Patent

active

045497885

ABSTRACT:
An optical device includes a layered semiconductor structure having a variable input light beam applied to the structure with an E field component polarized normal to the layers. Intensity of the input light beam controls charge trapped in the layers, the dielectric constant of the layers containing the trapped charge, and the propagation of the input light beam within the device.

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