Intelligent power device module

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257723, H01L 3902, H01L 2302, H01L 2316

Patent

active

054669693

ABSTRACT:
In a semiconductor device module of this invention, on a metal base is formed a metal layer, on which an insulating substrate is formed. On the insulating substrate is formed conducting film patterns, to which a power device and a control device for controlling the power device are electrically connected. The metal layer exists only between the insulating substrate and the base under the power device, whereas a space is provided between the insulating substrate and the base under the control device, and is filled with air.

REFERENCES:
patent: 5077595 (1991-12-01), Fukunaga

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Intelligent power device module does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Intelligent power device module, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Intelligent power device module will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1223191

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.