Integration type semiconductor device and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond

Reexamination Certificate

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C257S780000, C257S784000, C257SE23020

Reexamination Certificate

active

07579695

ABSTRACT:
A semiconductor device includes: a plurality of power MOS cells on a semiconductor substrate; a plurality of lead wires connecting to a source and a drain of each power MOS cell through a contact hole; a plurality of collecting electrodes connecting in parallel with the lead wires through a via hole; an interlayer protection film on the collecting electrode; a thick film electrode connecting to the collecting electrode through the opening; and a terminal protection film having an opening for bonding connection. The openings are formed in the interlayer protection film such that a portion between the openings becomes a beam shape.

REFERENCES:
patent: 5149674 (1992-09-01), Freeman, Jr. et al.
patent: 5287002 (1994-02-01), Freeman, Jr. et al.
patent: 6229221 (2001-05-01), Kloen et al.
patent: 6417575 (2002-07-01), Harada et al.
patent: 6803302 (2004-10-01), Pozder et al.
patent: 6909191 (2005-06-01), Hatano et al.
patent: 7235844 (2007-06-01), Itou
patent: 2003/0011073 (2003-01-01), Shinogi et al.
patent: 2005/0014356 (2005-01-01), Pozder et al.
patent: 2005/0121803 (2005-06-01), Angell et al.
patent: 2006/0097406 (2006-05-01), Wu et al.
patent: 0 587 442 (1994-03-01), None
patent: A-63-161634 (1988-07-01), None

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