Integration structure of semiconductor circuit and...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S667000, C257S745000, C257SE23010, C257SE21597, C257SE21483

Reexamination Certificate

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07875479

ABSTRACT:
The present invention discloses an integration structure of a semiconductor circuit and microprobe sensing elements and a method for fabricating the same. In the method of the present invention, a semiconductor circuit is fabricated on one surface of a semiconductor substrate, and the other surface of the semiconductor substrate is etched to form a microprobe structure for detect physiological signals. Next, a deposition method is used to sequentially form an electrical isolated layer and an electrical conductive layer on the microprobes. Then, an electrical conductive material is used to electrically connect the electrical conductive layer with the electrical pads of the semiconductor circuit. Thus is achieved the integration of a semiconductor circuit and microprobe sensing elements in an identical semiconductor substrate with the problem of electric electrical isolated being solved simultaneously. Thereby, the voltage level detected by the microprobes will not interfere with the operation of the semiconductor circuit.

REFERENCES:
patent: 5838005 (1998-11-01), Majumdar et al.
patent: 6479817 (2002-11-01), Yedur et al.
patent: 6838763 (2005-01-01), Ahn et al.
patent: 7160752 (2007-01-01), Ouellet et al.
patent: 7208809 (2007-04-01), Urano et al.
patent: 2006/0278825 (2006-12-01), van der Weide et al.
Anwar Sadad, Hongwei Qu, Chuanzhao Yu, Jiann S. Yuan, Huikai Xie; Low-Power CMOS Wireless MEMS Motion Sensor for Physiological Activity Monitoring; IEEE Transactions on Circuits and Systems-1: Regular Papers, vol. 52, No. 12, Dec. 2005, pp. 2539-2551.
Ann Witvrouw; CMOS-MEMS Integration: Why, How and What?; Computer-Aided Design, 2006, ICCAD, '06, IEEE/ACM International Conference, Nov. 5-9, 2006, pp. 826-827.

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