Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1992-01-21
1994-02-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 97, 257197, 257 96, 372 50, 372 48, H01L 3300
Patent
active
052834476
ABSTRACT:
Optoelectronic integrated circuits are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) and a transistor. The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible range which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping the regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL with bipolar and FET transistors as well as phototransistors.
REFERENCES:
patent: 4521888 (1985-06-01), Hayashi et al.
patent: 4733399 (1988-03-01), Mihashi et al.
patent: 4949350 (1990-08-01), Jewell et al.
patent: 4987468 (1991-01-01), Thornton
patent: 5034344 (1991-07-01), Jewell et al.
patent: 5132982 (1992-07-01), Chan et al.
patent: 5181085 (1993-01-01), Moon et al.
patent: 5202896 (1993-04-01), Taylor
Olbright et al., "Cascadable Laser Logic Devices: Discrete Integration of Phototransistors with Surface-Emitting Laser Diodes," Electronics Letters, vol. 27, No. 3, Jan. 31, 1991, pp. 216-217.
Jewell et al., "Vertical Cavity Single Quantum Well Laser," Appl. Phys. Lett. , 55 (5);31 Jul. 1989, pp. 424-426.
Matsueda et al., "Integration of a Laser Diode and a Twin FET," Japanese Journal of Applied Physics , vol. 20, Supplement 20-21, 1981, pp. 193-197.
Jewell et al., "Vertical Cavity Single Quantum Well Laser," Appl. Phys., Lett., vol. 55, Jul., 1989, pp. 424-426.
Jewell et al., "Low Threshold Electrically-Pumped Vertical Cavity Emitting Micro-lasers," Electronic Letters, vol. 25, Aug., 1989, pp. 1123-1124.
Jewell et al., "Vertical Cavity Lasers for Optical Interconnects," SPIE vol. 1389 International Conference on Advances in Interconnection and Packaging, 1990, pp. 401-407.
Olbright et al., "Cascadable Laser Logic Devices: Discrete Integration of Phototransistors with Surface Emitting Laser Diodes," Electronics Letters, vol. 27, No. 3, Jan. 31, 1991, pp. 216-217.
Jewell et al., "Vertical-Cavity Surface-Emitting Lasers: Design, Growth, Fabrication, Characterization," IEEE Journal of Quantum Electronics, vol. 27, No. 6, Jun., 1991, pp. 1332-1346.
Hasnian et al., "Monohthic Integration of Photodetector with Vertical Cavity Surface Emitting Laser," Electronic Letters, vol. 27, No. 18, Aug. 29, 1991, pp. 1630-1632.
Jewell et al., "Microlasers," Scientific American, vol. 265, No. 5, Nov., 1991, pp. 86-96.
Jewell Jack L.
Olbright Gregory R.
Bandgap Technology Corporation
Mintel William
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