Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-02-14
2006-02-14
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S082000
Reexamination Certificate
active
06998646
ABSTRACT:
An opto-electronic integrated circuit device includes top emitter/detector devices on a substrate. The top emitter/detector devices have top and bottom sides. The top emitter/detector devices are capable of emitting and detecting light beam from the top side, and have top contact pads on the top side. An optically transparent superstrate is attached to the top side. Micro-optic devices such as lenses can be attached to the superstrate. Top contact pads are connected to bottom contact pads. The bottom contact pads are attached to matching pads of an integrated circuit chip to produce an opto-electronic integrated circuit.
REFERENCES:
patent: 5371822 (1994-12-01), Horwitz et al.
patent: 5638469 (1997-06-01), Feldman et al.
patent: 5703895 (1997-12-01), Ghirardi et al.
patent: 5838703 (1998-11-01), Lebby et al.
patent: 5905750 (1999-05-01), Lebby et al.
patent: 6410941 (2002-06-01), Taylor et al.
patent: 6586776 (2003-07-01), Liu
Finisar Corporation
Pham Long
Workman Nydegger
LandOfFree
Integration of top-emitting and top-illuminated... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integration of top-emitting and top-illuminated..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integration of top-emitting and top-illuminated... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3707121