Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2006-10-24
2006-10-24
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S324000, C257SE21679, C257SE27103
Reexamination Certificate
active
07126172
ABSTRACT:
A multiple gate oxidation process is provided. The process comprises the steps of (a) providing a silicon substrate (203) having a sacrificial oxide layer (207) thereon; (b) depositing and patterning a first layer of photoresist (209) on the sacrificial oxide layer, thereby forming a first region in which the sacrificial oxide layer is exposed; (c) etching the exposed sacrificial oxide layer within the first region, thereby forming a first etched region; (d) growing a first oxide layer (211) within the first etched region; (e) depositing and patterning a second layer of photoresist (213) on the sacrificial oxide layer and first oxide layer, thereby forming a second region in which the sacrificial oxide layer is exposed; (f) etching the exposed sacrificial oxide layer within the second region, thereby forming a second etched region; and (g) growing a second oxide layer (215) within the second etched region.
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Kang Laegu
Lim Sangwoo
Yeap Geoffrey (Choh-Fei)
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Toledo Fernando L.
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