Integration of lateral and vertical quantum well transistors in

Details Integration of lateral and vertical quantum well transistors in Integration of lateral and vertical quantum well transistors in

1991-12-24

1993-01-12

Quach, T.

Fishing, trapping, and vermin destroying

437 31, 437 40, 437133, H01L 21328, H01L 21335, H01L 2172

Patent

active

051790378

ABSTRACT:
An epitaxial stack (10) is provided that allows integration of both vertical and horizontal quantum effect devices. Epitaxial stack (10) allows fabrication of both quantum well resonant tunneling transistors (27) and Stark-effect transistors (34), thus allowing for circuit integration of different quantum effect devices in the same epitaxial stack.

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