Integration of high-voltage devices and other devices

Details Integration of high-voltage devices and other devices Integration of high-voltage devices and other devices

2008-06-17

2009-12-15

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S146000, C257S154000, C257SE27079, C257SE29036, C257SE29211, C257SE29225

Reexamination Certificate

active

07633095

ABSTRACT:
Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The high-voltage devices may be used to create useful high-voltage circuits, such as level-shifting circuits, input protection circuits, charge pump circuits, switching circuits, latch circuits, latching switch circuits, interface circuits, any combination thereof, or the like. The high-voltage circuits may be controlled by the other circuitry.

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Mori, Kazuhisa et al., “A 5 to 130V Level Shifter composed of Thin Gate Oxide Dual Terminal Drain PMOSFETS,” IEEE Intl. Symp. Power Semiconductor Devices and ICs, 1997, pp. 345-348, IEEE.
Valeri, Stephen J. et al., “A Composite High-Voltage Device Using Low-Voltage SOI MOSFETS,” IEEE SOS/SOI Technology Conf., 1990, p. 169-170, IEEE.

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