Integration of GaAs on Si substrates

Details Integration of GaAs on Si substrates Integration of GaAs on Si substrates

1990-01-25

1992-04-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG26, 148DIG97, 156613, 437132, 437939, 437962, H01L 2120

Patent

active

051089475

ABSTRACT:
A method of growing a GaAs crystalline layer on a Si substrate by means of which mechanical stresses causing microcracks in the materials when cooled due to the difference in their thermal coefficients are reduced and the location of the microcrack is controlled to predetermined sites. Microcracks are deliberately induced in the GaAs layer at locations where the operation of the ultimate electronic device created on the material is not affected by applying to the substrate a SiO.sub.2 mask providing a deposition opening or window for the GaAs layer, which masks defines along the opening boundary at least one vertex in the cleavage direction of the GaAs crystals. The vertices in the mask create notches in the periphery of the deposited layer which determines the location of any microcracks.

REFERENCES:
patent: 4774205 (1988-09-01), Choi et al.
patent: 4826784 (1989-05-01), Salerno et al.
patent: 4914053 (1990-04-01), Matyi et al.
patent: 4925810 (1990-05-01), Kano et al.
patent: 4940672 (1990-07-01), Zavracky
Yacobi et al., "Stress Variations and Relief in Pattern GaAs . . . ", Appl. Phys. Lett., 52(7), Feb. 15, 1988, pp. 555-557.
Li et al., "Aspects of Selective Areas Growth . . . ", J. Electrochem. Soc., vol. 130, No. 10, Oct., 1983, pp. 2072-2075.
Deppe et al., "Effects of Microcracking on . . . GaAs Quantum Well Lasers Grown on Si", Appl. Phys. Lett., 53(10), Sep. 5, 1988, pp. 874-876.
Soga et al., "Selective MOCUD Growth of GaAs on Si . . . ", Jpn. J. Appl. Phys., vol. 26, No. 2, Feb. 1987, pp. 252-255.

Affiliated with

Also associated with

Rating

Integration of GaAs on Si substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integration of GaAs on Si substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integration of GaAs on Si substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1249182