Integration of filters using on-chip transformers for RF and...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S532000, C257SE27017, C257SE27024

Reexamination Certificate

active

10505258

ABSTRACT:
A band pass filter (114) is formed on an integrated circuit (IC) chip (102). Such band pass filter (114) may be used in a RF or wireless communication device, such as a mobile phone or a personal data assistant (PDA). The band pass filter (114) includes a transformer (202and204) made of a pair of metallic spirals formed on the IC chip. The metallic spirals may have substantially square or rectangular overall shape, and may be fabricated using copper. The metallic spirals may be co-planar and inter-wound or may be stacked, one on top of the other, and separated by a dielectric layer. The transformer (202and204) is capable of receiving an input signal, and providing high pass filtering to the input signal. The band pass filter (114) also includes a capacitor (226, 2; 230and232) that is capable of receiving the input signal and providing low pass filtering in conjunction with an inductance of the transformer (202and204). The band pass filter (114) provides band pass filtering through cascading said high pass and low p filtering.

REFERENCES:
patent: 5949299 (1999-09-01), Harada
patent: 6014386 (2000-01-01), Abraham
patent: 6045893 (2000-04-01), Fukushima et al.
patent: 6850746 (2005-02-01), Lloyd et al.
International Search Report for International Application No. PCT/US2003/005133, filed Feb. 21, 2003, International Search Report dated May 19, 2003 and mailed Aug. 1, 2003 (3 pgs.).
International Preliminary Examination Report for International Application No. PCT/US2003/005133, filed Feb. 21, 2003, International Preliminary Examination Report mailed Dec. 24, 2003 (4 pgs.).

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