Integration of epitaxial structures

Details Integration of epitaxial structures Integration of epitaxial structures

1991-12-20

1994-03-29

Fourson, George

Fishing, trapping, and vermin destroying

437110, 437126, 148DIG11, H01L 2120

Patent

active

052984532

ABSTRACT:
This is method for forming epitaxial structures on a substrate which comprises: forming a first epi layer on the substrate; removing one or more substantial portions of the first epi layer; forming a second epi layer over the first epi layer and adjacent said first epi layer; forming a masking layer over portions of the second epi layer which are not over the first epi layer; and substantially removing a portion of the second epi layer which is over the first epi layer to provide a substantially planar structure having different properties. Other devices and methods are also disclosed.

REFERENCES:
patent: 5102812 (1992-04-01), Caneau et al.
David B. Slater Jr., "Demonstration of a Monolithic NPN and PNP Complementary HBT Technology", SPIE-High-Speed Electronics and Device Scaling, pp. 90-105, vol. 1288, 1990.
W. E. Stanchina, et al., "InP Based Technology for Monolithic Multiple-Device, Multiple-Function ICs", GOMAC, pp 1-3, Paper No. 82, (date unknown).

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