Integration of amorphorous silicon transmit and receive...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S043010, C372S044010, C372S045013, C372S046012, C372S049010, C372S049010, C372S049010, C372S103000

Reexamination Certificate

active

07012943

ABSTRACT:
A device and a process for integrating light energy transmit and/or receive functions with active devices such as GaAs or InP devices or light emitting devices, such as lasers. The device and process includes forming a passivation layer on top of the active device and forming a silicon photodetector on top of the passivation layer. The photodetector may be formed utilizing a standard solar cell growth process and may be formed as a mesa on top of the active or light-emitting device, thus forming a relatively less complicated semiconductor with an integrated monitoring device.

REFERENCES:
patent: 4982256 (1991-01-01), Suzuki
patent: 5038356 (1991-08-01), Botez et al.
patent: 5355096 (1994-10-01), Kobayashi
patent: 5389896 (1995-02-01), Kobayashi
patent: 5398004 (1995-03-01), Kobayashi
patent: 5550520 (1996-08-01), Kobayashi
patent: 5710523 (1998-01-01), Kobayashi
patent: 5719893 (1998-02-01), Jiang et al.
patent: 5757834 (1998-05-01), Fang et al.
patent: 5757837 (1998-05-01), Lim et al.
patent: 5838031 (1998-11-01), Kobayashi et al.
patent: 5877519 (1999-03-01), Jewell
patent: 6023485 (2000-02-01), Claisse et al.
patent: 6097748 (2000-08-01), Huang et al.
patent: 6483862 (2002-11-01), Aronson et al.
patent: 6670599 (2003-12-01), Wagner et al.
patent: 198 07 783 (1999-09-01), None
patent: 0 987 800 (2000-03-01), None
Anders Karlsson et al., Analysis of a VCLAD: Vertical-Cavity Laser Amplifier Detector, IEEE Photonics Technology Letters, Nov. 1995, pp. 1336-1338, vol. 7, No. 11, New York, US.
Sui-F. Lim, et al., Vertical-Cavity Lasers with an Intracavity Resonant Detector, IEEE Journal of Selected Topics in Quantum Electronics, Apr. 1997, pp. 416-420, vol. 3, No. 2.
Copy of International Search Report, Oct. 22, 2003, 3 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integration of amorphorous silicon transmit and receive... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integration of amorphorous silicon transmit and receive..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integration of amorphorous silicon transmit and receive... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3544213

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.