Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-05-08
2011-10-11
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S082000, C257SE31096, C372S050210, C372S050124
Reexamination Certificate
active
08035114
ABSTRACT:
An optical device includes: a surface-emitting type semiconductor laser section; at least one isolation section formed above the surface-emitting type semiconductor laser section; and a photodetector section formed above the isolation section, wherein the surface-emitting type semiconductor laser section includes a first mirror, an active layer formed above the first mirror and a second mirror formed above the active layer, the photodetector section includes a first contact layer, a photoabsorption layer formed above the first contact layer and a second contact layer formed above the photoabsorption layer, and the isolation section includes a first isolation layer of a conductivity type different from a conductivity type of the second mirror, and a second isolation layer formed above the first isolation layer and having a conductivity type different from the conductivity type of the first contact layer and the first isolation layer.
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Gurley Lynne
Miyoshi Jesse Y
Oliff & Berridg,e PLC
Seiko Epson Corporation
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