Integration control and reliability enhancement of...

Details Integration control and reliability enhancement of... Integration control and reliability enhancement of...

2006-07-11

2009-06-30

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C438S619000, C257S750000, C257S752000

Reexamination Certificate

active

07553739

ABSTRACT:
An improved semiconductor device, integrated circuit, and integrated circuit fabrication method introduce highly controlled air cavities within high-speed copper interconnects. A polymer material is introduced on the edges of interconnect lines and vias within an interconnect stack. This incorporates and controls air cavities formation, thus enhancing the signal propagation performance of the semiconductor interconnects.

REFERENCES:
patent: 6413854 (2002-07-01), Uzoh et al.
patent: 7084479 (2006-08-01), Chen et al.
patent: 7294934 (2007-11-01), Kloster et al.
patent: 2004/0099951 (2004-05-01), Park et al.
patent: 2004/0099952 (2004-05-01), Goodner et al.
patent: 2004/0102031 (2004-05-01), Kloster et al.
patent: 2005/0087875 (2005-04-01), Furukawa et al.
European Search Report dated Oct. 13, 2006 for European Application No. EP 06291019.

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