Integration circuits for reducing electromigration effect

Details Integration circuits for reducing electromigration effect Integration circuits for reducing electromigration effect

2007-02-28

2010-02-23

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S211000, C257S758000, C257SE23145

Reexamination Certificate

active

07667328

ABSTRACT:
An integrated circuit for reducing the electromigration effect. The IC includes a substrate and a power transistor which has first and second source/drain regions. The IC further includes first, second, and third electrically conductive line segments being (i) directly above the first source/drain region and (ii) electrically coupled to the first source/drain region through first contact regions and second contact regions, respectively. The first and second electrically conductive line segments (i) reside in a first interconnect layer of the integrated circuit and (ii) run in the reference direction. The IC further includes an electrically conductive line being (i) directly above the first source/drain region, (ii) electrically coupled to the first and second electrically conductive line segments through a first via and a second via, respectively, (iii) resides in a second interconnect layer of the integrated circuit, and (iv) runs in the reference direction.

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