Integration circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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330300, 307497, H03F 345

Patent

active

052276813

ABSTRACT:
An integration circuit includes a differential amplifier constituted by at least two bipolar transistors serving as amplifying elements, a capacitor connected, as a load, to the differential amplifier, and a field-effect transistor having source and drain electrodes connected between the emitter electrodes of the two bipolar transistors. A control voltage is applied to the gate electrode of the field-effect transistor.

REFERENCES:
patent: 4904952 (1990-02-01), Tanimoto
patent: 5017805 (1991-05-01), Kase
Proceedings of the International Symposium on Circuits and Systems, vol. 22, No. 1/3, 1989, IEEE, pp. 100-105, F. Krummenacher, "Design Considerations in High-Frequency CMOS Transductance Amplifier Capacitor Filters".
MOS Transconductors and Integrators with High Linearity, IEE Electronics Letters, 27, Feb. 1986, vol. 22, No. 5, pp. 245-246.

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