Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-11-22
2005-11-22
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S459000, C257S465000
Reexamination Certificate
active
06967387
ABSTRACT:
There is described an integrating circuit for converting light energy produced by a photodetector into a voltage signal, this integrating circuit comprising an amplifier having an input coupled to a terminal of the photodetector and an output for outputting the voltage signal, and an integration capacitor having a first electrode connected to the amplifier input and a second electrode connected to the amplifier output. The first electrode of the capacitor is formed by the terminal of the photodetector connected to the amplifier input and the second electrode is formed by a layer of conductive material deposited on top of the photodetector and separated from this photodetector by a layer of insulating material, these layers of conductive material and of insulating material being transparent or nearly transparent at least for a given range of wavelengths of light. There is also described a method of forming the integration capacitor as well as a photodetector including the integration capacitor.
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patent: 6150649 (2000-11-01), Wake et al.
patent: 2005/0045910 (2005-03-01), Taylor et al.
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Matherson K. J. et al: Progress in the Development Large-Area Modular 64/spl times/64 CdZnTe imaging arrays for nuclear medicine: Nuclear Science Symposium, 1997. IEEE Albuquerque, NM US Nov. 9-15, 1997, New York, NY, USA, IEEE, US Nov. 9, 1997, pp. 276-280, XP010275807 ISBN: 0-7803-4258-5, p. 278; figure 4.
EM Microelectronic - Marin SA
Ngo Ngan V.
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