Integrated zener diode

Details Integrated zener diode Integrated zener diode

1976-06-25

1977-06-07

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307299A, 307318, 357 13, 357 36, 357 46, H03K 326, H01L 2972, H01L 2702

Patent

active

040285634

ABSTRACT:
This invention relates to an integrated zener diode having a breakdown voltage of less than about 5 volts. In order to achieve predetermined breakdown voltages within a small gap in the mass production independent of the bulk resistivity fluctuations, the zener diode of the invention comprises a forward-biased control transistor, the base zone of which is fed via a resistor zone to the emitter of said transistor as well as via the collector-emitter-line of a further multi-emitter transistor structure to the collector of said control transistor.

REFERENCES:
patent: 3523198 (1970-08-01), Keller
patent: 3567965 (1971-03-01), Weinerth et al.
patent: 3633052 (1972-01-01), Hanna
"Adjustable Low-Impedance Zener," by Karash in E.E.E., Apr., 1971, vol. 19, No. 4, Entry 403.
"Hybrid Zener Circuit," by Morgan et al. in IBM Tech. Discl. Bull., vol. 16, No. 9, Feb., 1974, pp. 2908-2909.

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