Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-12-18
2007-12-18
Wong, Don (Department: 2163)
Coherent light generators
Particular active media
Semiconductor
C359S344000
Reexamination Certificate
active
10469789
ABSTRACT:
A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer (12) has a semiconductor optical amplifier (38) coupled in each arm. A cross-gain semiconductor optical amplifier converter is coupled to the interferometer (12). The semiconductor optical amplifier (38) coupled in each arm is biased so that an optical path length difference between the two arms is in antiphase which results in destructive interference. The output of the tunable laser (10) is coupled to a coupler. A semiconductor optical amplifier (38) is used as a gain controller for the semiconductor optical amplifiers in the interferometer (12) to allow wavelength conversion over a larger range of input signal powers. The heterostructure substrate comprises a low bandgap waveguide layer and thinner multi-quantum well active regions disposed above the low bandgap waveguide layer. The heterostructure substrate has nonabsorbing passive elements formed therein by selectively removing the quantum wells regions above the waveguide layer to allow formation of active and passive sections in the waveguide layer without having to perform a butt joint regrowth. The invention is also characterized as a method of fabricating an integrated optical device as disclosed above in the heterostructure substrate.
REFERENCES:
patent: 4957337 (1990-09-01), Ogawa et al.
patent: 5105433 (1992-04-01), Eisele et al.
patent: 5249243 (1993-09-01), Skeie
patent: 5303079 (1994-04-01), Gnauck et al.
patent: 5355239 (1994-10-01), Nakajima
patent: 5699378 (1997-12-01), Lealman et al.
patent: 5808314 (1998-09-01), Nakajima et al.
patent: 5838714 (1998-11-01), Delorme
patent: 6069732 (2000-05-01), Koch et al.
patent: 6222964 (2001-04-01), Sadot et al.
patent: 6282005 (2001-08-01), Thompson et al.
patent: 6288410 (2001-09-01), Miyazawa
patent: 6577436 (2003-06-01), Kim
Mason et al., Jun. 1999, IEEE Photonics Technology Letters, vol. 11, No. 6, Widely Tunable Sampled Grating DBR Laser with Integrated Electroabsorption Modulator, pp. 1041-1043.
Charil et al, Oct. 1989, Electronic Letters, vol. 25, No. 22, pp. 1477-1478, Extremely Low Threshold Operation of 1.5μm GaInAsP/InP buried Ridge Stripe Lasers.
Blumenthal Daniel J
Fish Gregory
Mason Thomas Gordon Beck
Berliner & Associates
The Regents of the University of California
Vy Hung Tran
Wong Don
LandOfFree
Integrated wavelength tunable single and two-stage... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated wavelength tunable single and two-stage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated wavelength tunable single and two-stage... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3878908