Optical waveguides – Integrated optical circuit
Reexamination Certificate
2007-09-04
2007-09-04
Connelly-Cushwa, Michelle (Department: 2874)
Optical waveguides
Integrated optical circuit
Reexamination Certificate
active
11269354
ABSTRACT:
High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
REFERENCES:
patent: 5193131 (1993-03-01), Bruno
patent: 5747860 (1998-05-01), Sugiyama et al.
patent: 5910012 (1999-06-01), Takeuchi
patent: 6310995 (2001-10-01), Saini et al.
patent: 6537370 (2003-03-01), Hernandez et al.
patent: 6635110 (2003-10-01), Luan et al.
patent: 6646317 (2003-11-01), Takeuchi
patent: 6819839 (2004-11-01), Zheng et al.
patent: 6856733 (2005-02-01), Zheng
patent: 6897498 (2005-05-01), Gothoskar et al.
patent: 2003/0036217 (2003-02-01), Richard et al.
patent: 2004/0179806 (2004-09-01), Block et al.
Rouvière et at., “Integration of germanium waveguide photodetectors for optical intr-chip interconnects” Sep. 2004, Procedure of SPIE, vol. 5453, pp. 142-144.
Luan et al., “Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics” May 2001, Procedure of SPIE, vol. 4293.
Laura Marie Giovane, “Strain-balanced silicon-germanium materials for near IR photodetection in silicon-based optical interconnects” Aug. 1998, Massachusetts Institute of Technology.
Tolstikhin et al., “Single-mode vertical integration of p-i-n photodetectors with optical waveguides for monitoring in WDM trasmission systems”, Jun. 2003, Photonics Technology Letters, IEEE, vol. 15, Issue 6, pp. 843-845.
Yoshimoto et al., “SOI Waveguide GeSi Avalanche Pin Photodetector at 1.3 μm Wavelength,” IEICE Trans. Electron., vol. E81-C, No. 10 (1998) pp. 1667-1669.
International Search Report for Application No. PCT/US2006/020931 dated Sep. 29, 2006 (5 pages).
Written Opinion for Application No. PCT/2006/020931 mailed Oct. 10, 2006 (8 pages).
Ahn Donghwan
Kimerling Lionel C.
Liu Jifeng
Michel Jurgen
Connelly-Cushwa Michelle
Goodwin & Procter LLP
Massachusetts Institute of Technology
Prince Kajli
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