1980-05-23
1982-11-23
Lee, John D.
350 9614, 357 30, G02B 5174
Patent
active
043602460
ABSTRACT:
A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of incident optical radiation into the active region, employing confinement and waveguiding regions lying in the plane of the device and adapted to guide incident optical radiation to the active region. GaAs photoconductors are also provided by eliminating the gate electrode.
REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 3990775 (1976-11-01), Kaminow et al.
patent: 4054363 (1977-10-01), Suematsu
Applied Physics Letters, vol. 36, No. 2, Jan. 15, 1980, pp. 149-151, J. C. Gammel et al., "An Integrated Photoconductive Detector and Waveguide Structure".
IEEE Journal of Quantum Electronics, vol. QE-15, No. 2, Feb. 1979, pp. 72-82, James L. Merz et al., "GaAs Integrated Optical Circuits by Wet Chemical Etching".
Figueroa Luis
Slayman Charles W.
Yen Huan-Wun
Collins David W.
Gonzalez Frank
Hughes Aircraft Company
Karambelas A. W.
Lee John D.
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