Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-06-02
1997-02-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257533, 257358, 257360, 257363, 338 48, 338 79, 338260, 323369, 324704, H01L 2900, H01L 2362
Patent
active
056001762
ABSTRACT:
Integrated voltage divider comprising partial resistors (R1 ,R2) formed of paths of polycrystalline semiconductor material applied over a dielectric layer (4) on a semiconductor substrate (5). Under the paths, each forming a partial resistor (R1,R2) in the semiconductor substrate (5), a well (6 and 7 respectively) is formed having a conductivity type opposite to the conductivity type of the semiconductor substrate (5). The total surfaces of the paths forming the partial resistors (R1,R2) are dimensioned so that their ratio equals the inverse ratio of the resistor values of the two partial resistors (R1 ,R2).
REFERENCES:
patent: 2777930 (1957-01-01), Nathanson
patent: 4309626 (1982-01-01), Kudo
patent: 4727560 (1988-02-01), Van Zanten et al.
patent: 5215866 (1993-06-01), Maple
Donaldson Richard L.
Hiller William E.
Saadat Mahshid
Tang Alice W.
Texas Instruments Deustchland GmbH
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