Integrated VLSI radiation/particle detector with biased pin diod

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257290, 257435, 257656, 25037009, 25037008, 25037014, H01L 3106, H01L 2714, G01T 124

Patent

active

052371972

ABSTRACT:
A VLSI radiation/particle detector includes detecting elements based on one or more PIN diodes which are biased for collecting the charge generated by incident radiation or ionizing particles, and readout circuitry integrated on the same chip for detecting the collected charge. The junction of the PIN diode and the well containing the readout circuitry are separated far from each other such that the bias voltage required on the well to direct most generated charge to the collection electrodes can be reduced, and these can be made smaller to improve the detector's spatial resolution.

REFERENCES:
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patent: 3551761 (1970-12-01), Ruoff
patent: 3772576 (1973-11-01), Nienhuis
patent: 4183034 (1980-01-01), Burke et al.
patent: 4460912 (1984-07-01), Takeshita et al.
patent: 4691224 (1987-09-01), Takada
patent: 4801995 (1989-01-01), Iwanishi
Parker, Nuclear Inst. . . . Research A275 1989 pp. 494-516 North Holland "A Proposed VLSI Pixel . . . Detection".

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