Integrated verticle NPN and vertical oxide fuse programmable mem

Details Integrated verticle NPN and vertical oxide fuse programmable mem Integrated verticle NPN and vertical oxide fuse programmable mem

1986-12-05

1987-10-20

Carroll, J.

357 4, 357 6, 357 43, 357 54, 357 59, H01L 2702, H01L 2934, H01L 2904, H01L 2712

Patent

active

047017805

ABSTRACT:
A method of forming an aligned vertical oxide fuse and emitter using a single mask. The mask includes an opening through which impurities are introduced into the base region through a first layer of insulation and which is subsequently used to form the emitter aperture through the first insulative layer. The thin fuse oxide is formed by non-selective oxidation after removal of the mask. Alternatively, the impurities may also be introduced through the emitter aperture or from doped thin fuse oxide after removal of the mask. The resulting integrated circuit includes at least three regions of oxidation of three thicknesses, in descending order, field oxide, device opening or gate oxide and fuse oxide.

REFERENCES:
patent: 3506887 (1970-04-01), Gutteridge
patent: 3576549 (1971-04-01), Hess et al.
patent: 3634929 (1972-01-01), Yoshida et al.
patent: 3668655 (1972-06-01), Allen
patent: 3781977 (1974-01-01), Hulmes
patent: 3783048 (1974-01-01), Sanders
patent: 4053917 (1977-10-01), Blaha et al.
patent: 4131902 (1978-12-01), Kub
patent: 4153949 (1979-05-01), Rau, III et al.
patent: 4267633 (1981-05-01), Seiler
patent: 4312046 (1982-01-01), Taylor
patent: 4386968 (1983-06-01), Hinkel et al.
patent: 4403399 (1983-09-01), Taylor
patent: 4424578 (1984-01-01), Miyamoto
patent: 4437897 (1984-03-01), Kemlage
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4455194 (1984-06-01), Yabu et al.
patent: 4488262 (1984-12-01), Basire et al.
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4562639 (1986-01-01), McElroy
patent: 4569120 (1986-02-01), Stacy et al.
Briska et al., IBM-TDB, 23 (1980) 644.
Campbell et al., IBM-TDB, 25 (1983) 6147.

Affiliated with

Also associated with

Rating

Integrated verticle NPN and vertical oxide fuse programmable mem does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated verticle NPN and vertical oxide fuse programmable mem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated verticle NPN and vertical oxide fuse programmable mem will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1615440