Integrated vertical semiconductor component

Details Integrated vertical semiconductor component Integrated vertical semiconductor component

1997-11-03

2000-10-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257128, 257140, 257146, 257135, 257273, H01L 29772, H01L 29745, H01L 29808

Patent

active

061371246

ABSTRACT:
A vertical semiconductor component has an integrated switching device, which delivers an electric value correlating with the rear potential. The semiconductor component includes a doping region with a hole, which is free of the doping atoms of the doping region. The hole, when properly sized and contacted, can supply an electric current correlating with the rear potential.

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patent: 3295030 (1966-12-01), Allison
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patent: 4514747 (1985-04-01), Miyata
patent: 4952990 (1990-08-01), Griining
patent: 5086330 (1992-02-01), Mineto
patent: 5175598 (1992-12-01), Nishizawa et al.
patent: 5341003 (1994-08-01), Obinata
patent: 5548133 (1996-08-01), Kinzer
patent: 5600160 (1997-02-01), Hvistendahl

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