Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-06-26
2007-06-26
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S460000, C257S461000, C438S048000, C438S065000
Reexamination Certificate
active
10762913
ABSTRACT:
A variable optical attenuator. A PIN structure is integrated with an optical detector such as a PIN diode or an APD diode. When the PIN structure is forward biased, the light signal is not affected and is detected by the optical detector. When the PIN structure is reverse biased, the light signal is attenuated and the dynamic range of the optical detector can be increased.
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patent: 2003/0161571 (2003-08-01), Davids et al.
patent: WO97/08757 (1997-06-01), None
Levinson Frank
Lu Xuejun
Wang Steve
Erdem Fazli
Finisar Corporation
Pert Evan
Workman Nydegger
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