Electricity: electrical systems and devices – Electrostatic capacitors
Reexamination Certificate
2005-06-14
2005-06-14
Abraham, Fetsum (Department: 2826)
Electricity: electrical systems and devices
Electrostatic capacitors
C361S277000, C361S278000, C361S279000, C346S07700R, C346S07700R
Reexamination Certificate
active
06906904
ABSTRACT:
An integrated, tunable capacitance is specified in which the quality factor is improved by virtue of the fact that, instead of source/drain regions, provision is made of highly doped well terminal regions having a deep depth, for example formed as collector deep implantation regions. This reduces the series resistance of the tunable capacitance. The integrated, tunable capacitance can be used for example in integrated voltage-controlled oscillator circuits in which a high quality factor is demanded.
REFERENCES:
patent: 5965912 (1999-10-01), Stolfa et al.
patent: 6034388 (2000-03-01), Brown et al.
patent: 6172378 (2001-01-01), Hull et al.
patent: 0 800 218 (1997-10-01), None
patent: 03147376 (1991-06-01), None
Hung, C.-M. et al.: “A 25.9-GHz Voltage-Controlled Oscillator Fabricated in a CMOS Process”, Symposium on VLSI Circuits Digest of Technical Papers, IEEE, 2000, pp. 100-101.
Maget, J. et al.: “A Varactor with High Capacitance Tuning Range in Standard 0.25 μm CMOS Technology”, 4 pages.
Burghartz, J. N. et al.: “Integrated RF and Microwave Components in BiCMOS Technology”, IEEE Transactions on Electron Devices, vol. 43, No. 9, Sep. 1996, pp. 1559-1570.
Wong, W. M. Y. et al.: “A Wide Tuning Range Gated Varactor”, IEEE Journal of Solid-State Circuits, vol. 35, No. 5, May 2000, pp. 773-779.
Svelto, F. et al.: “A Three Terminal Varactor for RF IC's in Standard CMOS Technology”, IEEE Transactions on Electron Devices, vol. 47, No. 4, Apr. 2000, pp. 893-895.
Tiebout, M.: “A Fully Integrated 1.3GHz VCO for GSM in 0.25μm Standard CMOS with a Phasenoise of—142dBc/Hz at 3MHz Offset”, European Microwave Week, 2000, 4 pages.
Andreani, P. et al.: “On the Use of MOS Varactors in RF VCO's”, IEEE Journal of Solid-State Circuits, vol. 35, No. 6, Jun. 2000, pp. 905-910.
Porret, A.-S. et al.: “Design of High-Q Varactors for Low-Power Wireless Applications Using a Standard CMOS Process”, IEEE Journal of Solid-State Circuits, vol. 35, No. 3, Mar. 2000, pp. 337-345.
Abraham Fetsum
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner A.
LandOfFree
Integrated, tunable capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated, tunable capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated, tunable capacitance will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3466089