Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-01-17
2006-01-17
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S368000
Reexamination Certificate
active
06987291
ABSTRACT:
Integrated circuitry includes a bulk semiconductor substrate. A field effect transistor thereon includes a gate, a channel region in the bulk semiconductor substrate, and source/drain regions within the substrate on opposing sides of the channel region. A field isolation region is formed in the bulk semiconductor substrate and laterally adjoins with one of the source/drain regions. The field isolation region includes a portion which extends beneath at least some of the one source/drain region. Other aspects are contemplated.
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Abbott Todd R.
Cho Chih-Chen
Trivedi Jigish D.
Wang Zhongze
Fourson George
Micro)n Technology, Inc.
Pham Thanh
Wells St. John P.S.
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