Integrated transistor circuitry

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Reexamination Certificate

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C257S368000

Reexamination Certificate

active

06987291

ABSTRACT:
Integrated circuitry includes a bulk semiconductor substrate. A field effect transistor thereon includes a gate, a channel region in the bulk semiconductor substrate, and source/drain regions within the substrate on opposing sides of the channel region. A field isolation region is formed in the bulk semiconductor substrate and laterally adjoins with one of the source/drain regions. The field isolation region includes a portion which extends beneath at least some of the one source/drain region. Other aspects are contemplated.

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