Integrated thin film capacitor/inductor/interconnect system...

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Reexamination Certificate

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C428S210000, C174S257000, C174S258000, C361S750000, C361S751000, C361S765000, C361S766000, C361S792000, C361S794000, C361S795000, C361S811000, C361S812000, C363S147000

Reexamination Certificate

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06890629

ABSTRACT:
A system and method for the fabrication of high reliability capacitors (1011), inductors (1012), and multi-layer interconnects (1013) (including resistors (1014)) on various thin film hybrid substrate surfaces (0501) is disclosed. The disclosed method first employs a thin metal layer (0502) deposited and patterned on the substrate (0501). This thin patterned layer (0502) is used to provide both lower electrodes for capacitor structures (0603) and interconnects (0604) between upper electrode components. Next, a dielectric layer (0705) is deposited over the thin patterned layer (0502) and the dielectric layer (0705) is patterned to open contact holes (0806) to the thin patterned layer. The upper electrode layers (0907, 0908, 1009, 1010) are then deposited and patterned on top of the dielectric (0705).

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