Integrated thin film approach to achieve high ballast levels for

Details Integrated thin film approach to achieve high ballast levels for Integrated thin film approach to achieve high ballast levels for

1994-04-04

1995-08-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257577, 257578, 257579, 257581, 257582, 257583, H01L 2972

Patent

active

054442923

ABSTRACT:
The ballast resistance of a semiconductor device is increased without decreasing the figure of merit of the device. The semiconductor device includes an emitter feeder, a first contact coupled to the emitter feeder, a second contact, a resistive medium connected between the first contact and the second contact, an emitter, and a further resistive medium connected between the second contact and the emitter. The ballast resistance of the semiconductor device is increased without decreasing the figure of merit of the device by increasing the distance between the first contact and the second contact.

REFERENCES:
patent: 3619741 (1971-11-01), Morgan
patent: 4231059 (1980-10-01), Hower et al.
patent: 4639757 (1987-01-01), Shimizu
patent: 4680608 (1987-07-01), Tsuzuki et al.
patent: 4762804 (1988-08-01), Moors
D. R. Carley, Power Transistor Design, Radio Corporation of America, Components and Devices, Somerville, N.J. (Apr., 1967).

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