Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-09-26
2010-12-21
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C338S195000
Reexamination Certificate
active
07855432
ABSTRACT:
Devices, systems, and methods for providing an on-chip, temperature-stable resistance network for generating a precision current or precision resistance are disclosed. The resistance network includes a first resistance material having a linear, negative temperature coefficient of resistance and a second resistance material having a linear, positive temperature resistance. The first and second resistance materials are arrayed in segments proximate to a local, pulsed thermal gradient and are combined or mixed, i.e., trimmed, to provide a zero or near zero thermal coefficient.
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J.A. Babcock, Member, IEEE, et al., “Precision Electrical Trimming of Very Low TCR Poly-SiGe Resistors”, IEEE Electron Device Letters, vol. 21, No. 6, Jun. 2000, pp. 283-285.
Brady III Wade J.
Malsawma Lex
Patti John J.
Telecky Jr Frederick J.
Texas Instruments Incorporated
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