Integrated system and method for transversal enhanced Raman...

Optics: measuring and testing – By dispersed light spectroscopy – With raman type light scattering

Reexamination Certificate

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C385S012000

Reexamination Certificate

active

07136160

ABSTRACT:
Devices and methods for enhancing Raman Spectroscopy are disclosed. A molecular analysis device for performing Raman spectroscopy comprises a substrate and a laser source disposed on the substrate. The laser source is configured for generating a laser radiation with a direction substantially parallel with the substrate. The molecular analysis device also includes a Raman enhancement structure, which may be disposed on the substrate or on a waveguide disposed on the substrate. The Raman enhancement structure has an active surface substantially parallel to the substrate and is configured for producing a Raman scattered radiation. The Raman scattered radiation may be produced, when the laser radiation irradiates an analyte disposed on the Raman enhancement structure, or when an evanescent field emanating from the waveguide irradiates an analyte disposed on the Raman enhancement structure. In addition, a radiation receiver disposed on the substrate is configured for receiving the Raman scattered radiation.

REFERENCES:
patent: 5002350 (1991-03-01), Dragone
patent: 5455421 (1995-10-01), Spears
patent: 6380531 (2002-04-01), Sugihwo et al.
patent: 6613600 (2003-09-01), Tran et al.
patent: 6690851 (2004-02-01), Guilfoyle
patent: 6726763 (2004-04-01), Lee et al.
patent: 6775308 (2004-08-01), Hamster et al.
patent: 6782027 (2004-08-01), Cox et al.
patent: 6795623 (2004-09-01), Duan et al.
patent: 2002/0018504 (2002-02-01), Coldren
patent: 2004/0021860 (2004-02-01), Gardner et al.
patent: 2408796 (2005-06-01), None
patent: WO 00/43754 (2000-07-01), None
patent: WO 02/079821 (2002-10-01), None
patent: WO 2006/010367 (2006-02-01), None
patent: WO 2006/027581 (2006-03-01), None
Borgulova, J., et al., “Design of a Tunable RCE Photodetector for the 1550 nm Wavelength Range,” ASDAM '98, 2ndInternational Conference on Advanced Semiconductor Devices and Microsystems, Smolenice Castle, Slovakia, Oct. 5-7, 1998, pp. 117-120.
Emsley, Matthew K., et al., “High-Speed Resonant-Cavity-Enhanced Silicon Photodetectors on Reflecting Silicon-On-Isulator Substrates,” IEEE Photonics Technology Letters, vol. 14, No. 4, Apr. 2002, pp. 519-521.
Emsley, Matthew K., et al., “Silicon Substrates With Buried Distributed Bragg Reflectors for Resonant Cavity-Enhanced Optoelectronics,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 8, No. 4, Jul./Aug. 2002, pp. 948-955.
Jlang, Jiang, et al., “Single Molecule Raman Spectroscopy at the Junctions of Large Ag Nanocrystals,” J. Phys. Chem. B, vol. 107, No. 37, 2003, pp. 9964-9972.
Kelley, Anne Myers, et al., “Resonance Hyper-Raman Scattering from Conjugated Organic Donor-Acceptor “Push-Pull” Chromophores with Large First Hyperpolarizabilities,” J. Am. Chem. Soc., vol. 125, No. 35, 2003, pp. 10520-10521.
Kishino, Katsumi, et al., “Resonant Cavity-Enhanced (RCE) Photodetectors,” IEEE Journal of Quantum Electronics, vol. 27, No. 8, Aug. 1991, pp. 2025-2034.
Purica, M., et al., “Analysis and Optimization of the Bragg Reflector for Tunable Photodetector with Planar Mirror Optical Microcavity on Silicon Substrate,” IEEE, 2003, pp. 155-158.
Smit, Meint K., et al., “PHASAR-Based WDM-Devices: Principles, Design and Applications,” IEEE Jouranal of Selected Topics in Quantum Electronics, vol. 2, No. 2, Jun. 1996, pp. 236-250.
Yelin, Dvir, et al., “Multiphoton plasmon-resonance microscopy,” Optics Express, vol. 11, No. 12, Jun. 16, 2003, pp. 1385-1391.
Song et al —“Photonic Devices Based on In-Plane Hetero Photonic Crystals”—Science vol. 300 Jun. 6, 2003 —p. 1537.

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