Integrated structure with device having a preset reverse conduct

Details Integrated structure with device having a preset reverse conduct Integrated structure with device having a preset reverse conduct

1997-12-04

2000-02-01

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257579, 257162, 257163, H01L 27082, H01L 27102, H01L 2990, H01L 3111

Patent

active

060206233

ABSTRACT:
An integrated structure is made in a chip of semiconductor material inside an insulated N type region extending from a surface of the chip. The structure comprises a Zener diode formed by a P type first region extending from the surface inside the insulated region and by a second region of type N extending from the surface inside the first region. These regions form between themselves a buried junction, in which the structure further includes a lateral bipolar transistor having an emitter region provided by the first region.

REFERENCES:
patent: 3626390 (1971-12-01), Chang et al.
patent: 4319257 (1982-03-01), Beasom
patent: 4766469 (1988-08-01), Hill
patent: 4936928 (1990-06-01), Shaw et al.
patent: 5747837 (1998-05-01), Iwase et al.
Sedra et al, Microelectronic Circuits, pp. A-8 & A-9, 1987.

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