Patent
1988-10-18
1990-08-07
Wojciechowicz, Edward J.
357 34, 357 51, 357 55, H01L 2704
Patent
active
049472313
ABSTRACT:
The integrated structure consists of circuit components made by diffusion of dopes in a semiconductor substrate. Each of said components is situated inside a respective insulating pocket to which is applied a voltage falling between the minimum and the maximum voltage applied to the components contained in the corresponding pocket. p
REFERENCES:
patent: 4646124 (1987-02-01), Zunino
patent: 4684970 (1987-08-01), Sloane et al.
patent: 4740821 (1988-04-01), Bertotti et al.
Palara Sergio
Paparo Mario
Pellicano Roberto
SGS--Thomson Microelectronics S.r.l.
Wojciechowicz Edward J.
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