Integrated structure of MEMS device and CMOS image sensor...

Details Integrated structure of MEMS device and CMOS image sensor... Integrated structure of MEMS device and CMOS image sensor...

2008-12-14

2010-11-16

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S618000

Reexamination Certificate

active

07833818

ABSTRACT:
An integrated structure of MEMS device and CIS device and a fabricating method thereof includes providing a substrate having a CIS region and a MEMS region defined therein with a plurality of CIS devices positioned in the CIS region; performing a multilevel interconnect process to form a multilevel interconnect structure in the CIS region and the MEMS region and a micro-machined mesh metal in the MEMS region on a front side of the substrate; performing a first etching process to form a chamber in MEMS region in the front side of the substrate; forming a first mask pattern and a second mask pattern respectively in the CIS region and the MEMS region on a back side of the substrate; and performing a second etching process to form a plurality of vent holes connecting to the chamber on the back side of the substrate through the second mask pattern.

REFERENCES:
patent: 2010/0090298 (2010-04-01), Shih et al.
patent: 2010/0151615 (2010-06-01), Shiau et al.

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