Integrated structure of inductances with shared values on a...

Telecommunications – Receiver or analog modulated signal frequency converter – Frequency modifying or conversion

Reexamination Certificate

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C455S292000, C336S200000

Reexamination Certificate

active

06993313

ABSTRACT:
An integrated circuit including a structure of inductances on a semiconductor substrate, intended for operating at frequencies greater than several hundreds of MHz, including a first inductance formed by a conductive track and having first and second terminals respectively connected to each of the two ends of the conductive track, including a second inductance formed by the conductive track between the second terminal and any intermediary point of the conductive track connected to a third terminal, said second and third terminals forming the two terminals of the second inductance, and means for setting the third terminal to high impedance when the first inductance is used.

REFERENCES:
patent: 5874883 (1999-02-01), Uemura et al.
patent: 5892425 (1999-04-01), Kuhn et al.
patent: 6026286 (2000-02-01), Long
patent: 6285865 (2001-09-01), Vorenkamp et al.
patent: 2005/0156700 (2005-07-01), Chang
patent: 39 41 323 (1990-06-01), None
patent: 0 940 826 (1999-09-01), None
Cheung, D. et al., “Monolithic Transformers for Silicon RF IC Design,”in Proceedings of the Melecon Conferences, IEEE, New York, May 18, 1998, pp. 105-108.

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