Integrated structure for a signal transfer network, in particula

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357 51, H01L 2704

Patent

active

049690302

ABSTRACT:
The integrated structure is formed of various circuital components accomplished by diffusion of dopants in a semiconductor substrate. Each component is located inside a respective insulation recess electrically floating in relation to the substrate and the other components.

REFERENCES:
patent: 4163245 (1979-07-01), Kinoshita
patent: 4628341 (1986-12-01), Thomas
patent: 4648909 (1987-03-01), Krishna
patent: 4651178 (1987-03-01), Avery
patent: 4725561 (1988-02-01), Haond et al.

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