Integrated structure bipolar transistors with controlled storage

Details Integrated structure bipolar transistors with controlled storage Integrated structure bipolar transistors with controlled storage

1995-06-05

1997-05-13

Levy, Stuart S.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to reduce minority carrier lifetime

257610, H01L 27082, H01L 27102, H01L 2970, H01L 3111, H01L 29227

Patent

active

056295553

ABSTRACT:
Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an insulating material layer, and selectively removing the insulating material layer to open a window. The window has a second area much smaller than the first area occupied by the bipolar transistor. Therefore, by implanting into the silicon material a medium dose of platinum ions through the window and diffusing into the silicon material the implanted platinum ions, a uniform distribution of platinum inside the transistor is obtained.

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Journal of Applied Physics, Jul. 1, 1993, USA, vol. 74, nr. 1, pp. 195-200, ISSN 0021-8979, Coffa S. et al. "Three-Dimensional Concentration Profiles of Hybrid Diffusers In Crystalline Silicon".
Ion Implantation Technology. Ninth International Conference, Gainesville, FL, USA, 20-24 Sep. 1992, ISSN 0169-483X, Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), Apr. 1993, Netherlands, pp. 47-52, Coffa S. et al. "Diffusion and Lifetime Engineering Silicon".

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