Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection
Patent
1994-12-12
1996-06-25
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Device protection
257341, 257355, 257360, 257546, H01L 2974
Patent
active
055302718
ABSTRACT:
An integrated structure active clamp for the protection of a semiconductor power device against overvoltages includes at least one first diode and at least one second diode defined in a lightly doped layer of a first conductivity type in which the power device is also disposed. The first diode has a first electrode connected to a control electrode of the power device and a second electrode connected to a second electrode of the second diode. The second diode has a first electrode connected to a load driving electrode of the power device. The second electrode of the second diode is represented by a first buried region of a second conductivity type, which is buried in the lightly doped layer, and the first electrode of the second diode is represented by a first doped region of the first conductivity type which extends from a semiconductor top surface into the lightly doped layer to partially overlap the first buried region.
REFERENCES:
patent: 3806773 (1974-04-01), Watanabe
patent: 5162966 (1992-11-01), Fujihira
patent: 5221850 (1993-06-01), Sakurai
Patent Abstracts of Japan, vol. 14, No. 541 (E-1007) Nov. 29, 1990 & JP-A-02 230 774 (Fujitsu).
Patent Abstracts of Japan, vol. 13, No. 421 (E-822) Sep. 19, 1989 & JP-A-01 157 575 (NEC).
Patent Abstracts of Japan, vol. 17, No. 104 (E-1328) Mar. 3, 1993 & JP-A-04 291 767 (Fuji).
Anastasi John N.
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Driscoll David M.
Morris James H.
Wojciechowicz Edward
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