Integrated structure active clamp for the protection of power de

Details Integrated structure active clamp for the protection of power de Integrated structure active clamp for the protection of power de

1995-06-07

1997-08-05

Niebling, John

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438237, 438273, 438549, H01L 21265, H01L 2170, H01L 2700

Patent

active

056542259

ABSTRACT:
An integrated structure active clamp for the protection of a power device against overvoltages includes a plurality of serially connected diodes, each having a first and a second electrode, obtained in a lightly doped epitaxial layer of a first conductivity type in which the power device is also obtained; a first diode of said plurality of diodes has the first electrode connected to a gate layer of the power device and the second electrode connected to the second electrode of at least one second diode of the plurality whose first electrode is connected to a drain region of the power device; said first diode has its first electrode comprising a heavily doped contact region of the first conductivity type included in a lightly doped epitaxial layer region of the first conductivity type which is isolated from said lightly doped epitaxial layer by a buried region of a second conductivity type and by a heavily doped annular region of the second conductivity type extending from a semiconductor top surface to said buried region.

REFERENCES:
patent: 3806773 (1974-04-01), Watanabe
patent: 4072975 (1978-02-01), Ishitani
patent: 4896196 (1990-01-01), Blanchard et al.
patent: 4922371 (1990-05-01), Gray et al.
patent: 4971921 (1990-11-01), Fukunaga et al.
patent: 5045902 (1991-09-01), Bancal
patent: 5162966 (1992-11-01), Fujihira
patent: 5362980 (1994-11-01), Gough

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