Integrated sputtering apparatus and method

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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204298, C23C 1500

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active

041558251

ABSTRACT:
An integrated sputtering means for use in a triode sputtering apparatus having an ion target of a selected material positioned interior to a thin passageway in a housing and magnetic means which establishes a controlled magnetic field of flux having shaped magnetic lines of force which define a magnetic flux pattern having at least one selected flux density in at least one field direction contiguous the first surface of the ion target to encapsulate both electrons and plasma increasing efficiency of sputtering of selected material from the ion target and including an electron emitter and an electron collector to produce, in an evacuated enclosure, a controlled flow of electrons which collide with an ionizable gas within an evacuated enclosure forming a gas plasma which is attracted toward and impinges into an ion target surface formed of a selected material, the collision of which ejects from the ion target surface atoms of selected ion target material which adhere to a surface of the substrate forming a thin film of atoms of deposited ion target material on the substrate is shown.
A method and apparatus for depositing a thin film of material on a substrate by triode sputtering from an ion target of selected material using an integrated sputtering apparatus is shown.

REFERENCES:
patent: 3530057 (1970-09-01), Muly, Jr.
patent: 3711398 (1973-01-01), Clarke
patent: 3878085 (1975-04-01), Corbani
patent: 4021277 (1977-05-01), Shirn et al.
T. C. Tisone et al., "Low Voltage Triode Sputtering with a Confined Plasma, Part II: Plasma Characteristics & Energy Transport", J. Vac. Sci. Tech., vol. 12, pp. 1058-1066 (1975).

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