Integrated SOI fingered decoupling capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S296000, C257S301000, C257S305000, C257SE29001, C438S243000, C438S386000, C361S306200

Reexamination Certificate

active

07102204

ABSTRACT:
The invention provides a fingered decoupling capacitor in the bulk silicon region that are formed by etching a series of minimum or sub-minimum trenches in the bulk silicon region, oxidizing these trenches, removing the oxide from at least one or more disjoint trenches, filling all the trenches with either in-situ doped polysilicon, intrinsic polysilicon that is later doped through ion implantation, or filling with a metal stud, such as tungsten and forming standard interconnects to the capacitor plates.

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