Integrated single-crystal MEMS device

Wave transmission lines and networks – Coupling networks – Electromechanical filter

Reexamination Certificate

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C333S199000, C438S050000, C438S051000, C438S052000, C438S053000, C438S386000, C438S411000, C438S421000, C438S422000, C257S415000, C257SE21001, C310S309000

Reexamination Certificate

active

07982558

ABSTRACT:
Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

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