Integrated silicon vacuum micropackage for infrared devices

Details Integrated silicon vacuum micropackage for infrared devices Integrated silicon vacuum micropackage for infrared devices

1997-09-29

1999-04-20

Picardat, Kevin M.

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

458108, H01L 2144

Patent

active

058952330

ABSTRACT:
An efficient method brings together two wafers of dies that contain an infrared transparent window or top cap with either an infrared detector or emitter array to produce a low cost infrared package. A low thermal conductivity gas or a vacuum may be used between the wafers for enhanced thermal isolation. Joining of the wafers is preferably by solder, although ultrasonic bonding can be used.

REFERENCES:
patent: 3577037 (1971-05-01), Di Pietro
patent: 3973146 (1976-08-01), Arnold et al.
patent: 4122479 (1978-10-01), Sugawara et al.
patent: 4369458 (1983-01-01), Thomas et al.
patent: 4555720 (1985-11-01), Readhead
patent: 4784970 (1988-11-01), Solomon
patent: 5006711 (1991-04-01), Hamashima et al.
patent: 5318666 (1994-06-01), Eklind et al.
patent: 5397897 (1995-03-01), Komatsu et al.
patent: 5521123 (1996-05-01), Komatsu et al.
n-p-n Silicon Lateral Phototransistors for Hybrid Integrated Optical Circuits, Huang et al., IEEE vol. 6D-33, No. 4, Apr. 1986.

Affiliated with

Also associated with

Rating

Integrated silicon vacuum micropackage for infrared devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated silicon vacuum micropackage for infrared devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated silicon vacuum micropackage for infrared devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2244048